| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Carrier Type | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Capacitance | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Cutoff Current (ICEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Capacitance | |
| Frequency | |
| Frequency - NPN | |
| Frequency - PNP | |
| Lead Count | |
| Lead Pitch | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Offset Voltage (Max) | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package Code | |
| Package Dimensions | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage | |
| dc_current_gain (Minimum @ Ic=10 mA, Vce=2 V, PNP) | |
| dc_current_gain (Typical @ NPN) | |
| dc_current_gain (Typical @ PNP) |
The HFA3096BZ96 is an ultra high frequency transistor array manufactured by Renesas. It integrates five dielectrically isolated transistors on a common monolithic substrate, comprising three NPN and two PNP transistors. This complementary bipolar array is fabricated using Renesas' UHF-1 process, enabling high-frequency performance.
Key electrical specifications include a typical NPN transition frequency (fT) of 8 GHz and a typical PNP fT of 5.5 GHz. The NPN transistors have a minimum DC current gain (hFE) of 40 at 10 mA and 2 V, with a typical value of 70, while the PNP transistors have a minimum hFE of 20 and typical of 35. The device features a low noise figure of 3.5 dB at 1 GHz, making it suitable for RF amplifier and mixer applications. Breakdown voltages are 18 V for collector-base, 12 V for collector-emitter, and 6 V for emitter-base. Maximum collector current is 65 mA per transistor, with a total power dissipation of 150 mW.
The transistor array is offered in a 16-lead SOIC package (16-SOIC, 0.154" width, 3.90 mm body width) with a lead pitch of 1.3 mm. It is designed for surface mount assembly and is supplied on reel. The operating junction temperature range is -55°C to +150°C, with an ambient temperature range of -55°C to +125°C.
The array contains three NPN and two PNP transistors.
NPN transistors have a typical fT of 8 GHz, and PNP transistors have a typical fT of 5.5 GHz.
The typical noise figure is 3.5 dB at 1 GHz.
It is available in a 16-SOIC package (0.154" width, 3.90 mm body width) with a lead pitch of 1.3 mm.
The operating temperature range is -55°C to +125°C, with a junction temperature of up to 150°C.
The manufacturer indicates RoHS3 compliance, but this is unverified.