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HFA3046BZ The HFA3046BZ is a 5-NPN RF bipolar transistor array from Renesas in a 14-SOIC package. It features a 12V collector-emitter breakdown voltage, 65mA collector current, and 8GHz transition frequency.
Mfr Part #:

HFA3046BZ

Available from 1 distributors
Mfr Name: Renesas
Renesas
The HFA3046BZ is a 5-NPN RF bipolar transistor array from Renesas in a 14-SOIC package. It features a 12V collector-emitter breakdown voltage, 65mA collector current, and 8GHz transition frequency.
✓ Total Stock: 3,600 pcs

HFA3046BZ Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
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HFA3046BZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
SVHC Present
Supplier Device Package
Transistor Type
Voltage
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HFA3046BZ Description

Short technical summary and product information.

The HFA3046BZ is a surface-mount RF bipolar transistor array containing five NPN transistors in a 14-SOIC package. It is designed for RF applications requiring a transition frequency of 8 GHz and a typical noise figure of 3.5 dB at 1 GHz.

 

Electrical characteristics include a maximum collector-emitter breakdown voltage of 12V, a maximum collector current of 65mA, and a maximum power dissipation of 150mW. The minimum DC current gain is 40 at Vce=2V and Ic=10mA. The maximum junction temperature is rated at 150°C.

 

The device is supplied in a 14-SOIC (0.154", 3.90mm width) surface-mount package, suitable for automated assembly. The five NPN transistors in a single package can simplify RF circuit layouts by reducing component count.

HFA3046BZ Quick Information

Product Type: RF Bipolar Junction Transistor (BJT) Array
Canonical Name: RF Transistor Array, 5 NPN, 12V VCEO, 8GHz, 14-SOIC
Subcategory: RF Transistors

HFA3046BZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HFA3046BZ Features

  • Five NPN transistors in one package.
  • 8GHz typical transition frequency.
  • 12V maximum collector-emitter breakdown voltage.
  • Surface mount 14-SOIC package.
  • 3.5dB typical noise figure at 1GHz.

HFA3046BZ Applications

  • Suitable for RF amplifier circuits.
  • Used in RF oscillator designs.
  • Ideal for multi-stage RF signal paths.
  • Suitable for high-frequency switching applications.

HFA3046BZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage of the HFA3046BZ?

The maximum collector-emitter breakdown voltage (VCEO) is 12V.

What is the transition frequency of the HFA3046BZ?

The typical transition frequency (ft) is 8GHz.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

What is the package type of the HFA3046BZ?

The HFA3046BZ is available in a 14-SOIC (0.154", 3.90mm Width) surface mount package.

What is the RoHS compliance status of the HFA3046BZ?

The HFA3046BZ is listed as RoHS3 compliant.

What is the maximum collector current of the HFA3046BZ?

The maximum collector current (Ic) is 65mA.

What is the minimum DC current gain of the HFA3046BZ?

The minimum DC current gain (hFE) is 40 at Vce=2V and Ic=10mA.

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