| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Reverse Recovery Time (trr) | |
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| Voltage |
The HFA15TB60PBF is an ultrafast recovery diode manufactured by Infineon Technologies (formerly International Rectifier). It features a reverse breakdown voltage of 600V and a continuous forward current rating of 15A at a case temperature of 100°C.
The diode exhibits a typical forward voltage of 1.3V at 15A and 25°C, with a maximum of 1.7V. Reverse recovery time is typically 60ns, with a reverse recovery charge of 84nC at 125°C. The device has a low junction capacitance of 25pF typical at 200V reverse bias.
Designed as a companion diode for IGBTs and MOSFETs, the HFA15TB60PBF offers ultrasoft recovery characteristics, reducing EMI and switching losses. It is suitable for high-frequency power conversion applications such as switch-mode power supplies and inverters.
The diode is housed in a TO-220AC through-hole package and is supplied in tubes of 50 units. It operates over a junction temperature range of -55°C to 150°C.
The reverse breakdown voltage is 600V minimum at 100µA, and the maximum DC reverse voltage is 600V.
The continuous forward current is 15A maximum at a case temperature of 100°C.
At 15A and 25°C, the typical forward voltage is 1.3V, with a maximum of 1.7V.
The typical reverse recovery time is 60ns.
It is available in a TO-220AC through-hole package, supplied in tubes of 50.
The operating junction temperature range is -55°C to 150°C.
The maximum peak forward surge current is 150A for a single pulse.