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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Vbr) | |
| Current | |
| Forward Surge Current (IFSM) | |
| Forward Voltage (Typical/Maximum @ IF=12 A, Tj=25 °C) | |
| Forward Voltage (Typical/Maximum @ IF=6 A, TJ=125 °C) | |
| Forward Voltage (Typical/Maximum @ IF=6 A, TJ=25 °C) | |
| Junction Capacitance (Cj) | |
| Mounting Type | |
| Operating Temperature | |
| Peak Reverse Recovery Current (IRRM) | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Repetitive Peak Forward Current (IFRM) | |
| Repetitive Peak Reverse Voltage (VRRM) | |
| Reverse Leakage Current (Typical/Maximum @ VR = VR rated, TJ = 25 °C) | |
| Reverse Leakage Current (Typical/Maximum @ VR=0.8 xVR rated, TJ=125 °C) | |
| Reverse Recovery Charge (Qrr) | |
| Reverse Recovery Time (trr) | |
| Series Inductance (Ls) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| dI(rec)M/dt |
The HFA06TB120S is an ultrafast soft recovery diode from Vishay's HEXFRED series. It is rated for a repetitive peak reverse voltage of 1200V and an average rectified current of 6A at a case temperature of 100°C. The device features a typical reverse recovery time of 26ns, with a very low peak reverse recovery current of 4.4A and a reverse recovery charge of 116nC. This combination ensures reduced switching losses and noise in high-frequency applications.
The forward voltage is typically 2.7V at 6A and 25°C, with a maximum of 3.0V. The diode can handle repetitive peak forward current up to 24A and a non-repetitive surge current of 80A. Power dissipation is rated at 62.5W at 25°C case temperature.
The HFA06TB120S is housed in a surface-mount D²PAK (TO-263AB) package, offering robust thermal performance and compatibility with automated assembly. It is designed for use as a companion diode for IGBTs and MOSFETs in power conversion systems, motor drives, and power supplies, where high efficiency and low EMI are critical.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $3.24 | $3.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (VRRM) is 1200 V.
The average rectified current (Io) is 6 A at a case temperature of 100°C.
The typical reverse recovery time (trr) is 26 ns.
The forward voltage (Vf) is typically 2.7 V and maximum 3.0 V at 6 A and 25°C.
The device is offered in a surface-mount D²PAK (TO-263AB) package.
The maximum non-repetitive forward surge current (IFSM) is 80 A.
The typical reverse recovery charge (Qrr) is 116 nC.