| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
195 pcs
|
195 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The HEF4011BP from NXP Semiconductors is a high-performance quadruple 2-input NAND gate integrated circuit. This device is part of the HE4000B logic family and provides the positive quadruple 2-input NAND function.
Key electrical characteristics include typical propagation delays ranging from 35 ns at 15V to 55 ns at 5V, with load capacitance and supply voltage influencing these times. Dynamic power dissipation varies with supply voltage, from 1300 µW at 5V up to 6000 µW at 10V. The outputs are fully buffered, ensuring the highest noise immunity and pattern insensitivity of output impedance.
Available in multiple package options including 14-lead plastic DIP (SOT27-1), 14-lead ceramic DIP (SOT73), and 14-lead SOIC (SOT108-1), the HEF4011BP is suitable for various board-level integration needs. Its design is optimized for reliable operation in digital logic applications.
This component is specified for use in digital circuits requiring reliable NAND logic functions. The buffered outputs contribute to robust signal integrity in complex systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical propagation delay for the HEF4011BP at 5V is 55 ns.
The typical propagation delay for the HEF4011BP at 10V is 45 ns.
The typical propagation delay for the HEF4011BP at 15V is 35 ns.
The HEF4011BP is available in 14-lead plastic DIP, 14-lead ceramic DIP (cerdip), and 14-lead plastic SOIC packages.
The typical dynamic power dissipation at 10V supply voltage is 6000 µW.