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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,200 pcs
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4200 pcs | On Request | 1 | On Request | On Request | 1108 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The HD1750JL is an NPN bipolar junction transistor manufactured by STMicroelectronics. Designed for high-voltage and high-current applications, it offers a collector-emitter voltage (Vceo) of 800 V and a continuous collector current (Ic) of 24 A, with a power dissipation capability of 200 W.
Electrical characteristics include a minimum DC current gain (hFE) of 5.5 at a test condition of Ic = 12 A and Vce = 5 V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 3 V at Ib = 3 A and Ic = 12 A. The transistor is specified for a maximum junction temperature of 150°C.
Packaged in a through-hole TO-264-3 (also TO-264AA) case, the device features three leads and is suitable for board mounting through standard through-hole techniques. The TO-264 package provides efficient thermal management for high-power operation.
150°C (TJ).
Yes, it is listed as RoHS3 compliant in the database.
Through-hole TO-264-3, TO-264AA package.
800 V.
24 A.
Minimum 5.5 at Ic = 12 A, Vce = 5 V.
3 V at Ib = 3 A, Ic = 12 A.