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HD1750FX STMicroelectronics HD1750FX NPN power transistor with 800V collector-emitter breakdown voltage, 24A collector current, and 75W power dissipation in an ISOWATT-218FX through-hole package.
Mfr Part #:

HD1750FX

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STMicroelectronics HD1750FX NPN power transistor with 800V collector-emitter breakdown voltage, 24A collector current, and 75W power dissipation in an ISOWATT-218FX through-hole package.
✓ Total Stock: 4,566 pcs

HD1750FX Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,336 pcs
On Request
2336 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
2,230 pcs
On Request
2230 pcs On Request 1 On Request On Request On Request On Request On Request
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HD1750FX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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HD1750FX Description

Short technical summary and product information.

The STMicroelectronics HD1750FX is a high-voltage NPN bipolar junction transistor designed for power switching and amplification applications.

 

It features a collector-emitter breakdown voltage (Vceo) of 800V and a nominal collector current (Ic) of 24A, with a maximum power dissipation of 75W. The device offers a minimum DC current gain (hFE) of 6.5 at Ic=12A, Vce=5V, and a maximum collector-emitter saturation voltage of 3V at Ib=3A, Ic=12A.

 

Housed in the ISOWATT-218FX through-hole package, this transistor provides good thermal performance with a maximum junction temperature of 150°C. It is suitable for demanding high-voltage power circuits in industrial and consumer electronics.

HD1750FX Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: STMicroelectronics HD1750FX NPN Bipolar Transistor
Subcategory: Single BJT

HD1750FX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HD1750FX Features

  • NPN bipolar junction transistor design.
  • 800V collector-emitter breakdown voltage.
  • 24A nominal collector current rating.
  • 75W maximum power dissipation capability.
  • ISOWATT-218FX through-hole package.

HD1750FX Applications

  • Used in high-voltage power switching circuits.
  • Suitable for power amplification stages.
  • Ideal for industrial power converters.
  • Employed in inverter and regulator modules.

HD1750FX FAQs

7 frequently asked questions generated from this part’s specifications.
What type of transistor is the HD1750FX?

It is an NPN bipolar junction transistor.

What is the maximum collector-emitter voltage rating of the HD1750FX?

The collector-emitter breakdown voltage (Vceo) is 800V.

What is the maximum collector current of the HD1750FX?

The nominal collector current (Ic) is 24A.

What is the power dissipation rating of the HD1750FX?

The maximum power dissipation is 75W.

What package is the HD1750FX available in?

The HD1750FX is supplied in an ISOWATT-218FX through-hole package.

What is the operating temperature range for the HD1750FX?

The maximum junction temperature is 150°C.

What is the DC current gain (hFE) of the HD1750FX?

The minimum hFE is 6.5 at Ic=12A, Vce=5V.

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