| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,619 pcs
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1619 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Agilent Technologies HBFP-0420-TR1 is a high-performance isolated collector silicon bipolar transistor suitable for RF applications. It features an NPN structure and is designed for high gain and low noise applications.
Key electrical characteristics include a transition frequency (fT) of 25 GHz at 1.8 GHz, a typical associated gain of 17 dB, and a noise figure of 1.1 dB at 2 V and 5 mA. The transistor also provides a P1dB of 12 dBm at 2 V and 20 mA, making it suitable for various RF circuits. It can be used without impedance matching.
This component comes in a surface mount plastic package, specifically the SOT-34. Its silicon bipolar technology ensures reliable performance in demanding RF environments. The transistor is ideal for applications requiring high gain and low noise figures within the KU band.
Designed for ease of integration, the HBFP-0420-TR1 is a versatile component for RF engineers. Its specifications make it a strong candidate for signal amplification and low-noise amplifier designs.
| Qty | Low | High |
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| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) of the HBFP-0420-TR1 is 25 GHz at 1.8 GHz.
At 1.8 GHz, the typical associated gain is 17 dB and the noise figure is 1.1 dB.
The P1dB rating is 12 dBm at 2 V and 20 mA.
The HBFP-0420-TR1 is an NPN silicon bipolar transistor.
The HBFP-0420-TR1 is supplied in a surface mount plastic package, SOT-34.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.