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HBFP-0405

The Agilent Technologies HBFP-0405 is a high-performance RF bipolar transistor ideal for low current applications. It features a transition frequency of 25 GHz and a low noise figure.

✓ Total Stock: 1,623 pcs

$ Price Range: $0.24

HBFP-0405 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,623 pcs On Request	1623 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

HBFP-0405 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Agilent Technologies
Junction Temperature	150 °C
Mounting Type	Surface Mount
Power Dissipation	54 mW
Storage Temperature	-65 to 150 °C
Tape & Reel	Yes
Thermal Resistance	550 °C/W

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HBFP-0405 Description

Short technical summary and product information.

The Agilent Technologies HBFP-0405 is a high-performance, isolated collector silicon bipolar junction transistor designed for RF applications. It is housed in a miniature 4-lead SC-70 (SOT-343) surface mount plastic package.

This transistor offers excellent performance characteristics, including a transition frequency (fT) of 25 GHz. At 1.8 GHz, it provides an associated gain of 18 dB and a noise figure of 1.2 dB when operating at 2 V and 2 mA. The device also delivers a P1dB of 5 dBm at 1.8 GHz under similar conditions.

Ideal for high gain, low current applications, the HBFP-0405 is suitable for use in LNA, oscillator, driver amplifier, buffer amplifier, and down converter circuits. Its capabilities extend to cellular and PCS handsets, cordless telephones, and oscillators for TV delivery and TVRO systems up to 12 GHz. The high gain and low current characteristics make it well-suited for C-Band and Ku-Band applications.

The HBFP-0405 is designed for surface mounting, offering convenience in PCB assembly. Its robust construction and performance parameters make it a reliable choice for demanding RF designs.

HBFP-0405 Quick Information

Product Type: RF Bipolar Transistor

Canonical Name: Agilent Technologies HBFP-0405 High Performance Isolated Collector Silicon Bipolar Transistor

Subcategory: RF

HBFP-0405 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

HBFP-0405 Estimated Pricing

Qty	Low	High
1+	$0.24	$0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

HBFP-0405 Features

High performance isolated collector bipolar transistor.
Ideal for high gain, low current applications.
Transition frequency (fT) of 25 GHz.
Low noise figure of 1.2 dB at 1.8 GHz.
Miniature 4-lead SC-70 (SOT-343) package.

HBFP-0405 Applications

Used in cellular and PCS handsets.
Suitable for LNA and oscillator circuits.
Applicable for TV delivery systems up to 12 GHz.
Ideal for C-Band and Ku-Band applications.

HBFP-0405 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the transition frequency (fT) of the HBFP-0405?

The typical transition frequency (fT) is 25 GHz.

What is the typical noise figure of the HBFP-0405?

The typical minimum noise figure (FMIN) is 1.2 dB at 1.8 GHz with IC=2 mA and VCE=2 V.

What is the package type of the HBFP-0405?

The HBFP-0405 is housed in a surface-mount SC-70 (SOT-343) package.

What is the maximum collector-emitter voltage for the HBFP-0405?

The maximum collector-emitter voltage (VCEO) is 4.5 V.

What is the maximum power dissipation of the HBFP-0405?

The maximum power dissipation (PT) is 54 mW.