| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,125 pcs
|
1125 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Renesas HAT2261H-EL-E is a 30V N-Channel Power MOSFET designed for high-speed switching applications. It offers a continuous drain current of 45A and a pulsed drain current of 180A, making it suitable for demanding power management tasks. The device features a low on-resistance of 3.8mOhm maximum at 10V gate drive (2.9mOhm typical), and 6.1mOhm maximum at 4.5V gate drive. Gate charge is 27nC at 4.5V, enabling efficient switching. Input capacitance is 4400pF at 10V drain-source voltage. The MOSFET is housed in a surface mount 5-LFPAK package (SC-100, SOT-669), which allows for high-density PCB mounting. Power dissipation is 25W at case temperature 25°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
| 10+ | $0.69 | $0.69 |
| 100+ | $0.63 | $0.63 |
| 500+ | $0.57 | $0.57 |
| 1,000+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
It is available in a surface mount 5-LFPAK package (SC-100, SOT-669).
150°C (junction temperature).
Yes, it is RoHS3 compliant.
Typical Rds(on) is 2.9mOhm at 10V gate drive, 22.5A drain current.
4.5V and 10V.
45A at 25°C case temperature.