HAT2218R-EL-E The HAT2218R-EL-E is a dual N-Channel MOSFET from Renesas with a maximum drain-source voltage of 30V and continuous drain currents of 7.5A and 8A per channel.
Mfr Part #:

HAT2218R-EL-E

Available from 1 distributors
Mfr Name: Renesas
Renesas
The HAT2218R-EL-E is a dual N-Channel MOSFET from Renesas with a maximum drain-source voltage of 30V and continuous drain currents of 7.5A and 8A per channel.
✓ Total Stock: 120,533 pcs
$ Price Range: $0.82 - $1.04

HAT2218R-EL-E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request

HAT2218R-EL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology

HAT2218R-EL-E Description

Short technical summary and product information.

The HAT2218R-EL-E is a dual N-Channel MOSFET manufactured by Renesas. It features two asymmetrical N-Channel MOSFETs in a single 8-SOIC package, suitable for space-constrained applications requiring two independent switching devices.

 

Electrical specifications: The device has a maximum drain-source voltage (Vdss) of 30V. Continuous drain current ratings are 7.5A for channel 1 and 8A for channel 2. The maximum drain-source on-resistance (Rds(on)) is 24 mOhm at Id=3.75A and Vgs=10V. It features a logic level gate with 4.5V drive capability, enabling direct interfacing with low-voltage logic. Gate charge (Qg) is 4.6 nC at Vgs=4.5V, and input capacitance (Ciss) is 630 pF at Vds=10V. Maximum power dissipation is 1.5W.

 

Package and thermal: The device is surface mount in an 8-SOIC (0.154", 3.90mm Width) package with a supplier device package of 8-SOP. The maximum junction temperature is 150°C. The MOSFET uses standard MOSFET (Metal Oxide) technology.

 

Typical applications include power management, load switching, and DC-DC converter circuits where dual N-Channel MOSFETs are required. The logic level gate simplifies drive circuitry.

HAT2218R-EL-E Quick Information

Product Type: MOSFET Array
Canonical Name: Renesas HAT2218R-EL-E Dual N-Channel MOSFET, 30V, 7.5A/8A, 8-SOIC
Subcategory: Dual N-Channel MOSFET

HAT2218R-EL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

HAT2218R-EL-E Estimated Pricing

Qty Low High
1+ $1.04 $1.04
10+ $0.98 $0.98
100+ $0.92 $0.92
1,000+ $0.87 $0.87
10,000+ $0.82 $0.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

HAT2218R-EL-E Features

  • Dual N-Channel MOSFET in 8-SOIC package.
  • 30V maximum drain-source voltage rating.
  • 7.5A and 8A continuous drain current per channel.
  • Logic level gate with 4.5V drive capability.
  • Low on-resistance of 24 mOhm typical.

HAT2218R-EL-E Applications

  • Used in power management and load switching.
  • Ideal for DC-DC converter circuits.
  • Suitable for battery protection applications.
  • Can be used in motor control drivers.

HAT2218R-EL-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HAT2218R-EL-E?

30V.

What is the package type of the HAT2218R-EL-E?

8-SOIC (0.154", 3.90mm Width) with supplier device package 8-SOP.

What is the maximum junction temperature?

150°C.

Is the HAT2218R-EL-E RoHS compliant?

RoHS3 compliant (unverified).

What are the continuous drain current ratings?

Channel 1: 7.5A, Channel 2: 8A.

What gate drive voltage is required?

Logic level gate with 4.5V drive.

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