| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The Renesas HAT2201WP-EL-E is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage of 100V and a continuous drain current of 15A at 25°C. The device offers a low on-resistance of 43mOhm maximum at 7.5A and 10V gate drive, enabling efficient power conversion.
With an input capacitance of 1450pF at 10V and a total gate charge of 21nC at 10V, this MOSFET is suitable for moderate-speed switching. The maximum junction temperature is 150°C, providing adequate thermal margin for many designs. It is packaged in a surface-mount 8-PowerWDFN (8-WPAK) package, which is compact and suitable for automated assembly.
8-PowerWDFN (8-WPAK supplier package).
150°C.
RoHS3 compliant (unverified).
100V maximum.
15A at 25°C.
43mOhm at 7.5A, 10V.
Surface mount.