| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,258 pcs
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14258 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The HAT2197R-EL-E is an N-Channel MOSFET from Renesas designed for power management applications. It offers a drain-source voltage rating of 30V and a continuous drain current of 16A (at Ta). The device features a low maximum on-resistance of 6.7mΩ at 8A drain current and 10V gate drive, enabling efficient power switching.
The MOSFET is driven by gate voltages of 4.5V or 10V, with a maximum gate-source voltage of ±20V. It has a total gate charge of 18nC at 4.5V and an input capacitance of 2650pF at 10V drain-source voltage, making it suitable for moderate-speed switching applications.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, with a supplier device package of 8-SOP. It has a maximum power dissipation of 2.5W at ambient temperature and an operating junction temperature range up to 150°C. The MOSFET uses standard metal-oxide semiconductor technology.
30V.
8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as 8-SOP.
150°C.
It is listed as RoHS3 Compliant, but this is unverified.
16A at ambient temperature (Ta).
Maximum 6.7mΩ at 8A drain current and 10V gate drive.
4.5V or 10V for optimal performance.