| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,100 pcs
|
12100 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Current | |
| Mounting Type | |
| Number of Channels | |
| SVHC Present | |
| Tape & Reel | |
| Voltage |
The Renesas HAT2183WP-EL is an N-channel single power MOSFET. It is rated for a maximum drain-source voltage (Vdss) of 150V and a continuous drain current (ID) of 20A. The on-resistance (RDS(on)) is a maximum of 64mohm at 10V.
This MOSFET is suitable for industrial applications and has a power dissipation (Pd) of 30W. It features a typical gate charge (Qg) of 27nC and an input capacitance (Ciss) of 1200pF.
The device is supplied in a WPAK surface-mount package. It has a lead count of 8 and is supplied on embossed tape, though not on a reel.
Key electrical parameters include a gate-source cutoff voltage (Vgs(off)) of 4.5V maximum and a typical on-resistance of 57mohm at 10V/8V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
20A.
N-Channel.
64mohm maximum, 57mohm typical.
27nC.
1200pF.
WPAK (Power SON-8 5x6) surface-mount package.