| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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333 pcs
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333 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Renesas HAT2180RP-EL-E is a high-performance N-Channel Power MOSFET designed for various electronic applications. This component offers a drain-source voltage rating of 30V and a low on-resistance of 0.015 Ohms, ensuring efficient power handling and minimal power loss.
The MOSFET is housed in an HSOP-11 package, suitable for surface-mount applications. Its N-channel configuration makes it ideal for switching and amplification tasks in power management circuits, motor control, and other general-purpose power applications.
Key electrical characteristics include its specific on-resistance and voltage ratings, which are crucial for designers selecting components for optimal performance and reliability. The HSOP-11 package provides a balance of thermal performance and board space efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The on-resistance is 0.015 Ohms.
It is an N-Channel MOSFET.
The package is HSOP-11.