| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,375 pcs
|
4375 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Renesas HAT2173N-EL-E is an N-Channel power MOSFET designed for efficient power switching applications. It offers a drain-to-source voltage rating of 100V and a continuous drain current of 25A, making it suitable for medium-voltage power management.
Key electrical characteristics include a maximum on-resistance of 15.3mOhm at 12.5A and 10V gate drive, a typical gate charge of 61nC, and an input capacitance of 4350pF. The device has a maximum gate threshold voltage of 6V at 20mA drain current and can dissipate up to 30W of power.
The MOSFET is housed in an 8-PowerSOIC package with a 3.90mm width, also known as the 8-LFPAK-iV supplier device package. It is designed for surface mount assembly and has an operating junction temperature rating of 150°C.
The drain-source voltage (Vdss) is 100V.
The maximum drain current is 25A at Ta.
The maximum on-resistance is 15.3mOhm at 12.5A drain current and 10V gate-source voltage.
It comes in an 8-PowerSOIC (0.154", 3.90mm Width) surface mount package, also known as 8-LFPAK-iV.
The maximum operating junction temperature is 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low-confidence.