HAT2173H-EL-E N-Channel MOSFET from Renesas with 100V drain-source voltage and 25A continuous drain current. Features low on-resistance of 15mOhm and is housed in an LFPAK surface-mount package.
Mfr Part #:

HAT2173H-EL-E

Available from 3 distributors
Mfr Name: Renesas
Renesas
N-Channel MOSFET from Renesas with 100V drain-source voltage and 25A continuous drain current. Features low on-resistance of 15mOhm and is housed in an LFPAK surface-mount package.
✓ Total Stock: 60,800 pcs

HAT2173H-EL-E Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,267 pcs
60267 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
413 pcs
413 pcs On Request 1 On Request On Request 1739+ On Request On Request
Non-Authorised Inventory information
120 pcs
120 pcs On Request 1 On Request On Request On Request On Request On Request

HAT2173H-EL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HAT2173H-EL-E Description

Short technical summary and product information.

The Renesas HAT2173H-EL-E is an N-Channel power MOSFET designed for high-efficiency switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 25A. The device offers a low maximum on-resistance of 15mOhm at a gate-source voltage of 10V and a drain current of 12.5A, enabling reduced conduction losses.

 

Key electrical characteristics include a gate threshold voltage of 6V maximum at 20mA, a gate charge of 61nC at 10V, and an input capacitance of 4350pF at 10V drain-source voltage. These parameters support fast switching and efficient gate drive design.

 

The MOSFET is housed in a surface-mount LFPAK package (SC-100, SOT-669), which provides excellent thermal performance with a maximum junction temperature of 150°C. The package is suitable for automated assembly and space-constrained designs.

 

Typical applications include DC-DC converters, power management circuits, motor control, and battery protection. The device is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

HAT2173H-EL-E Quick Information

Product Type: Single MOSFET
Canonical Name: Renesas HAT2173H-EL-E N-Channel MOSFET, 100V, 25A, LFPAK
Subcategory: N-Channel MOSFET

HAT2173H-EL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HAT2173H-EL-E Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 25A.
  • Low on-resistance of 15mOhm typical.
  • Surface-mount LFPAK package.
  • Gate charge of 61nC for fast switching.

HAT2173H-EL-E Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management applications.
  • Ideal for motor control systems.
  • Applicable in battery protection circuits.

HAT2173H-EL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the continuous drain current?

25A.

What is the on-resistance?

15mOhm at 12.5A, 10V.

What is the operating temperature range?

Maximum junction temperature is 150°C.

What package is this MOSFET available in?

SC-100, SOT-669 (LFPAK).

Is this component RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

6V max at 20mA.

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