| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Renesas HAT2171H-EL-E is an N-Channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It features a maximum drain-to-source voltage of 40V and a continuous drain current rating of 40A (Ta). The device offers a low on-resistance of 4.8mOhm maximum at Vgs = 10V and Id = 20A, enabling reduced conduction losses.
This MOSFET is built with MOSFET (Metal Oxide) technology and requires a gate drive voltage between 7V and 10V for optimal Rds(on) performance. The gate charge is 52 nC maximum at Vgs = 10V, and the input capacitance is 3750 pF maximum at Vds = 10V, making it suitable for moderate-frequency switching circuits.
The HAT2171H-EL-E is supplied in an SC-100 / SOT-669 package with LFPAK supplier device package designation, designed for surface mount assembly. The maximum power dissipation is 25W (Tc), and the operating junction temperature range extends up to 150°C.
The maximum drain-source voltage is 40V.
The continuous drain current is 40A (Ta).
The maximum on-resistance is 4.8mOhm at Vgs = 10V and Id = 20A.
It comes in an SC-100 / SOT-669 surface mount package with LFPAK supplier device package.
The maximum operating junction temperature is 150°C.
Yes, it is listed as RoHS3 compliant.