HAT2169H-EL-E Renesas HAT2169H-EL-E is an N-Channel MOSFET with 40V drain-source voltage and 50A drain current. It features a low 3.5mOhm on-resistance and comes in an LFPAK surface-mount package.
Mfr Part #:

HAT2169H-EL-E

Available from 3 distributors
Mfr Name: Renesas
Renesas
Renesas HAT2169H-EL-E is an N-Channel MOSFET with 40V drain-source voltage and 50A drain current. It features a low 3.5mOhm on-resistance and comes in an LFPAK surface-mount package.
✓ Total Stock: 135,202 pcs

HAT2169H-EL-E Available from 3 distributors

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55,474 pcs
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HAT2169H-EL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HAT2169H-EL-E Description

Short technical summary and product information.

The Renesas HAT2169H-EL-E is a single N-Channel power MOSFET designed for efficient switching applications. It is rated for a maximum drain-to-source voltage of 40V and a continuous drain current of 50A at ambient temperature. The device features a very low maximum on-resistance of 3.5mOhm at a gate drive of 10V and 25A drain current, enabling high efficiency and reduced power losses.

 

This MOSFET supports gate drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 2.5V at 1mA drain current. It has a maximum gate-to-source voltage rating of ±20V. The input capacitance is 6650pF at 10V drain-source, and the total gate charge is 45nC at 4.5V, which aids in fast switching performance.

 

The device is housed in an LFPAK (SC-100, SOT-669) surface-mount package, suitable for automated assembly. It has a maximum power dissipation of 30W at case temperature and an operating junction temperature range up to 150°C.

HAT2169H-EL-E Quick Information

Product Type: Single N-Channel MOSFET
Series: HAT2169H
Canonical Name: Renesas HAT2169H-EL-E N-Channel MOSFET
Subcategory: Single N-Channel

HAT2169H-EL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HAT2169H-EL-E Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • 50A continuous drain current at ambient temperature.
  • Low 3.5mOhm maximum on-resistance at 10V gate drive.
  • Surface-mount LFPAK (SC-100, SOT-669) package.
  • RoHS3 compliant and REACH unaffected.

HAT2169H-EL-E Applications

  • Suitable for DC-DC converter and power supply circuits.
  • Used in load switching and battery management systems.
  • Ideal for motor control and automotive applications.

HAT2169H-EL-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HAT2169H-EL-E?

The maximum drain-source voltage (Vdss) is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 50A at ambient temperature (Ta).

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds on) is 3.5mOhm at Vgs = 10V and Id = 25A.

What package does the HAT2169H-EL-E come in?

It comes in an LFPAK surface-mount package, also known as SC-100 or SOT-669.

What is the operating temperature range?

The maximum junction temperature (TJ) is 150°C.

Is the HAT2169H-EL-E RoHS compliant?

Yes, it is listed as RoHS3 Compliant, though this is unverified.

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