| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,527 pcs
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1527 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
868 pcs
|
868 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
534 pcs
|
534 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Renesas HAT2168H-EL-E is an N-Channel MOSFET designed for power switching applications. It has a maximum drain-source voltage of 30V and can handle a continuous drain current of 30A at ambient temperature. The device features a low maximum on-resistance of 7.9mΩ at 15A gate drive of 10V, enabling efficient power handling with minimal conduction losses.
This MOSFET supports gate drive voltages of 4.5V and 10V, with a maximum gate-source voltage rating of ±20V. It has an input capacitance of 1730pF at 10V drain-source and a maximum gate charge of 11nC at 4.5V, making it suitable for moderate-speed switching applications. The maximum power dissipation is 15W at case temperature, and the junction temperature can reach up to 150°C.
The HAT2168H-EL-E is housed in an SC-100/SOT-669 package with an LFPAK supplier device package, designed for surface-mount assembly. This compact package is suitable for space-constrained PCB layouts in power management, load switching, and DC-DC conversion circuits.
The maximum drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 30A at ambient temperature (Ta).
The maximum drain-source on-resistance is 7.9mΩ at 15A drain current and 10V gate-source voltage.
The device is available in an SC-100/SOT-669 package with an LFPAK supplier device package, designed for surface-mount mounting.
The maximum junction temperature is 150°C.
The maximum power dissipation is 15W at case temperature (Tc).
The maximum gate-source voltage is ±20V.