HAT2165H-EL-E The HAT2165H-EL-E is a surface-mount N-Channel MOSFET from Renesas, rated for 30V drain-source voltage and 55A drain current. It features a low 3.3mOhm on-resistance and comes in an LFPAK package.
Mfr Part #:

HAT2165H-EL-E

Available from 3 distributors
Mfr Name: Renesas
Renesas
The HAT2165H-EL-E is a surface-mount N-Channel MOSFET from Renesas, rated for 30V drain-source voltage and 55A drain current. It features a low 3.3mOhm on-resistance and comes in an LFPAK package.
✓ Total Stock: 72,613 pcs

HAT2165H-EL-E Available from 3 distributors

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72,320 pcs
72320 pcs On Request 1 On Request On Request On Request On Request On Request
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279 pcs
279 pcs On Request 1 On Request On Request 10+ On Request On Request
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14 pcs
14 pcs On Request 1 On Request On Request 601 On Request On Request

HAT2165H-EL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

HAT2165H-EL-E Description

Short technical summary and product information.

The HAT2165H-EL-E is an N-Channel MOSFET manufactured by Renesas, designed for high-efficiency power switching applications. It supports a maximum drain-source voltage of 30V and a continuous drain current of 55A at ambient temperature, making it suitable for moderate-power circuits.

 

With a maximum on-resistance of 3.3mOhm at 27.5A and 10V gate drive, this device minimizes conduction losses. The gate charge is 33nC at 4.5V, and input capacitance is 5180pF at 10V, providing predictable switching behavior. The gate threshold voltage is 2.5V at 1mA, and the maximum gate-source voltage is ±20V.

 

The MOSFET is housed in an SC-100/SOT-669 package with an LFPAK supplier device package, designed for surface-mount assembly. It can dissipate up to 30W at case temperature and operates at junction temperatures up to 150°C. This component is suitable for power management, load switching, and DC-DC conversion applications.

HAT2165H-EL-E Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30V 55A MOSFET
Subcategory: Single N-Channel MOSFET

HAT2165H-EL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

HAT2165H-EL-E Features

  • N-Channel MOSFET for power switching.
  • 30V maximum drain-source voltage.
  • 55A maximum drain current at ambient.
  • Low 3.3mOhm on-resistance at 10V.
  • Surface-mount LFPAK package.

HAT2165H-EL-E Applications

  • Power management in DC-DC converters.
  • Load switching in low-voltage circuits.
  • Battery protection and management.
  • Motor control and driver circuits.

HAT2165H-EL-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the HAT2165H-EL-E?

The maximum drain-source voltage is 30V.

What is the maximum drain current of the HAT2165H-EL-E?

The maximum drain current is 55A at ambient temperature.

What is the on-resistance of the HAT2165H-EL-E?

The maximum on-resistance is 3.3mOhm at 27.5A and 10V gate drive.

What is the operating temperature range of the HAT2165H-EL-E?

The maximum junction operating temperature is 150°C.

What package is the HAT2165H-EL-E available in?

The HAT2165H-EL-E is available in an SC-100/SOT-669 package with an LFPAK supplier device package.

Is the HAT2165H-EL-E RoHS compliant?

Yes, the HAT2165H-EL-E is RoHS3 compliant.

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