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HAT2164H-EL-E Renesas HAT2164H-EL-E is an N-Channel MOSFET with 30V drain-source voltage, 60A continuous drain current, and 3.1 mOhm on-resistance in an LFPAK surface mount package.
Mfr Part #:

HAT2164H-EL-E

Available from 3 distributors
Mfr Name: Renesas
Renesas
Renesas HAT2164H-EL-E is an N-Channel MOSFET with 30V drain-source voltage, 60A continuous drain current, and 3.1 mOhm on-resistance in an LFPAK surface mount package.
✓ Total Stock: 4,596 pcs

HAT2164H-EL-E Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,170 pcs
On Request
3170 pcs On Request 1 On Request On Request 11+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
1,187 pcs
On Request
1187 pcs On Request 1 On Request On Request On Request On Request On Request
OTL Components ✓
Non-Authorised Inventory information
239 pcs
On Request
239 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

HAT2164H-EL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
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HAT2164H-EL-E Description

Short technical summary and product information.

The Renesas HAT2164H-EL-E is an N-Channel power MOSFET designed for high-efficiency power management applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 60A at 25°C case temperature. The device achieves a low on-resistance of 3.1 mOhm maximum at 30A gate drive of 10V, enabling reduced conduction losses.

 

This MOSFET uses MOSFET (Metal Oxide) technology and supports drive voltages of 4.5V and 10V for flexible gate drive design. The maximum gate charge is 50 nC at 4.5V, and the input capacitance is 7600 pF at 10V drain-source voltage, providing moderate switching performance for power conversion circuits.

 

The device is housed in an SC-100 / SOT-669 package with LFPAK supplier device package designation, suitable for surface mount assembly. Maximum power dissipation is 30W at 25°C case temperature, and the junction temperature rating is 150°C. The maximum gate-source voltage is ±20V.

HAT2164H-EL-E Quick Information

Product Type: MOSFET
Canonical Name: Renesas HAT2164H-EL-E N-Channel MOSFET
Subcategory: N-Channel

HAT2164H-EL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HAT2164H-EL-E Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 60A continuous drain current at 25°C case.
  • Low 3.1 mOhm on-resistance at 10V gate drive.
  • Surface mount LFPAK package for compact design.
  • 150°C maximum junction temperature rating.

HAT2164H-EL-E Applications

  • Used in low-voltage DC-DC converter circuits.
  • Suitable for power management in portable devices.
  • Ideal for load switching and battery protection.
  • Applicable in motor drive and power supply designs.

HAT2164H-EL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the HAT2164H-EL-E?

The drain-to-source voltage (Vdss) is 30 V.

What is the maximum continuous drain current?

The continuous drain current is 60 A at 25°C ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 3.1 mOhm at a drain current of 30 A and gate-source voltage of 10 V.

What package does the HAT2164H-EL-E use?

It is available in SC-100 / SOT-669 surface mount package with LFPAK supplier device package.

What is the maximum operating junction temperature?

The maximum junction temperature is 150 °C.

What is the gate charge of this device?

The maximum gate charge is 50 nC at a gate-source voltage of 4.5 V.

What is the input capacitance?

The maximum input capacitance is 7600 pF at a drain-source voltage of 10 V.

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