Mfr Part #:

HAT2160H-EL-E

Mfr Name: Renesas

N-Channel MOSFET from Renesas with 20V drain-source voltage, 60A continuous drain current, and low 2.6mOhm on-resistance in a surface-mount LFPAK package.

✓ Total Stock: 3,789 pcs

HAT2160H-EL-E Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Rayichip ✓ Non-Authorised Inventory information	2,500 pcs On Request	2500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	776 pcs On Request	776 pcs	On Request	1	On Request	On Request	1014	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	513 pcs On Request	513 pcs	On Request	1	On Request	On Request	2012+	On Request	On Request

HAT2160H-EL-E Description

Short technical summary and product information.

The Renesas HAT2160H-EL-E is an N-Channel MOSFET using metal-oxide semiconductor technology. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 60A at 25°C ambient temperature. The device offers a low on-resistance of 2.6mOhm maximum at 30A drain current and 10V gate drive.

This MOSFET is designed for high-efficiency power switching applications. It has a gate charge of 54 nC at 4.5V and an input capacitance of 7750 pF at 10V drain-source voltage. The gate threshold voltage is 2.3V maximum at 1mA drain current. The maximum gate-to-source voltage is ±20V. The device can dissipate up to 30W at case temperature 25°C and operates at a junction temperature up to 150°C.

The HAT2160H-EL-E is supplied in a surface-mount LFPAK package, which is compatible with SC-100 and SOT-669 footprints. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). This component is suitable for compact power management circuits where low resistance and high current handling are required.

HAT2160H-EL-E Quick Information

Product Type: MOSFET

Canonical Name: Renesas HAT2160H-EL-E N-Channel MOSFET

Subcategory: N-Channel MOSFET

HAT2160H-EL-E Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

HAT2160H-EL-E Features

N-Channel MOSFET with 20V drain-source voltage.
60A continuous drain current capability.
Low on-resistance of 2.6mOhm typical.
Surface-mount LFPAK package for compact designs.
RoHS3 compliant and MSL 1 rated.

HAT2160H-EL-E Applications

Used in DC-DC converter power stages.
Ideal for battery management systems.
Suitable for load switching applications.
Applied in low-voltage motor drives.

HAT2160H-EL-E FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage?

20V.

What is the continuous drain current rating?

60A at 25°C ambient temperature.

What is the typical on-resistance?

2.6mOhm maximum at 30A drain current and 10V gate drive.

What package does the HAT2160H-EL-E come in?

Surface-mount LFPAK package compatible with SC-100 and SOT-669.

What is the maximum operating junction temperature?

150°C.

Is the HAT2160H-EL-E RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the gate charge?

54 nC at 4.5V gate-source voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Renesas
Current	60A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	7750 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	2.6mOhm @ 30A, 10V
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 1mA