| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The HAT2143H-EL-E is an N-Channel enhancement-mode power MOSFET manufactured by Renesas. It is designed for high-efficiency power management applications.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 30V, a continuous drain current (Id) of 40A at Ta, and a maximum on-resistance (Rds(on)) of 6.1mOhm at 20A and 10V gate drive. The device features a total gate charge (Qg) of 40nC and an input capacitance (Ciss) of 2450pF, enabling efficient switching performance.
The HAT2143H-EL-E is housed in a surface-mount LFPAK package (SC-100, SOT-669) with 5 leads. It supports a drive voltage range of 4.5V to 10V and has a maximum power dissipation of 20W at Tc. The operating junction temperature range extends to 150°C.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 40A at Ta.
The maximum on-resistance is 6.1mOhm at Id=20A and Vgs=10V.
The HAT2143H-EL-E is available in a surface-mount LFPAK package (SC-100, SOT-669).
The maximum operating junction temperature (TJ) is 150°C.
The HAT2143H-EL-E is listed as RoHS3 compliant, but this status is unverified.