| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The Renesas HAT2141H-EL-E is an N-Channel enhancement-mode MOSFET with a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 15A at ambient temperature. It utilizes MOSFET (Metal Oxide) technology for efficient switching performance.
The device features a maximum drain-source on-resistance of 27.5mOhm at Vgs=10V, Id=7.5A, and a typical gate charge of 46nC at Vgs=10V. Input capacitance is 3200pF at Vds=10V. The MOSFET is designed for surface mount assembly in the LFPAK package (SC-100, SOT-669). It supports drive voltages of 7V and 10V, with a maximum gate-source voltage of ±20V.
With a maximum power dissipation of 20W at case temperature and an operating junction temperature range up to 150°C, the HAT2141H-EL-E is suitable for various power management and switching applications in automotive, industrial, and consumer electronics.
The maximum operating junction temperature is 150°C (TJ).
The device is available in SC-100, SOT-669 (LFPAK) surface mount package.
RoHS3 compliant (unverified).
100V.
15A at ambient temperature (Ta).
Maximum gate charge is 46 nC at Vgs=10V.
Maximum on-resistance is 27.5 mOhm at Id=7.5A, Vgs=10V.