| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,442 pcs
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2442 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Renesas HAT2140H-EL-E is an N-Channel enhancement-mode MOSFET designed for power switching applications. It is rated for a maximum drain-to-source voltage of 100V and a continuous drain current of 25A at 25°C ambient temperature. The device features a low maximum on-resistance of 16mΩ at a drain current of 12.5A with a 10V gate drive, enabling efficient power conversion with reduced conduction losses.
This MOSFET supports gate drive voltages of 7V and 10V, providing flexibility in driver circuit design. The maximum gate-to-source voltage is ±20V, and the maximum input capacitance is 6500pF at 10V drain-source voltage. The total gate charge is 105nC at 10V gate-source voltage, which is relevant for estimating switching speeds and gate drive requirements.
The device is housed in an SC-100/SOT-669 package with an LFPAK supplier device package, designed for surface-mount assembly. It has a maximum power dissipation of 30W at a case temperature of 25°C and a maximum junction operating temperature of 150°C. The LFPAK package offers a compact footprint suitable for space-constrained PCB layouts.
Typical applications include power supply circuits, DC-DC converters, load switching, and other power management functions where efficient switching and low on-resistance are required. The surface-mount package and RoHS3 compliance make it suitable for modern electronic manufacturing processes.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 25A at 25°C ambient temperature.
The maximum on-resistance (Rds on) is 16mΩ at a drain current of 12.5A with a 10V gate-source voltage.
The HAT2140H-EL-E is available in an SC-100/SOT-669 package with an LFPAK supplier device package, designed for surface-mount mounting.
The maximum operating junction temperature is 150°C.
The HAT2140H-EL-E is listed as RoHS3 compliant, though this status is unverified and should be confirmed with the manufacturer.