SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,442 pcs
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2442 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The Renesas HAT2140H-EL is a high-performance Nch Single Power MOSFET designed for industrial and consumer applications. It offers a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 25A.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 16mohm at 10V, a typical on-resistance of 12.5mohm at 10V/8V, and a typical gate charge (Qg) of 105nC. The input capacitance (Ciss) is typically 6500pF.
This MOSFET is housed in a surface-mount LFPAK package, making it suitable for compact designs. It is qualified for industrial use and supports applications requiring robust power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the HAT2140H-EL is 100V.
The continuous drain current (Id) rating for the HAT2140H-EL is 25A.
The maximum on-resistance (Rds(on)) of the HAT2140H-EL at 10V is 16mohm.
The HAT2140H-EL is in an LFPAK package.
The HAT2140H-EL is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the HAT2140H-EL is 1 Unlimited.