| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The HAT2116H-EL-E is an N-Channel MOSFET manufactured by Renesas. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 30A at an ambient temperature of 25°C. The device offers a low on-resistance of 8.2mOhm maximum at 15A drain current and 10V gate drive. Gate charge is 26nC at 10V, and input capacitance is 1650pF at 10V drain-source voltage.
The MOSFET is designed for surface-mount assembly and is supplied in an LFPAK package, which corresponds to the SC-100 and SOT-669 case codes. It supports a drive voltage range of 4.5V to 10V for optimal Rds(on) performance. Maximum power dissipation is 15W at case temperature 25°C, and the maximum junction temperature is 150°C.
This component is suitable for low-voltage switching applications such as DC-DC converters, load switches, and power management circuits. The LFPAK package provides good thermal and electrical performance in a compact footprint.
30V maximum.
30A at Ta=25°C.
8.2mOhm maximum at 15A, 10V.
SC-100, SOT-669; supplier device package LFPAK.
150°C junction temperature.
RoHS3 compliant (unverified).
26nC at 10V.