| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The Renesas HAT2099H-EL-E is an N-Channel MOSFET designed for general-purpose switching applications. It operates with a maximum drain-source voltage of 30V and can handle a continuous drain current of 50A at 25°C case temperature. The device is built using MOSFET (Metal Oxide) technology.
Key electrical characteristics include a maximum on-resistance of 3.7mOhm at 25A drain current and 10V gate drive, a gate charge of 75nC, and an input capacitance of 4750pF. The maximum gate-source voltage is ±20V, and the maximum power dissipation is 30W at case temperature. The junction temperature rating is 150°C.
The HAT2099H-EL-E is offered in a surface-mount package compatible with SC-100 and SOT-669, with a supplier device package of LFPAK. It is RoHS3 compliant, REACH unaffected, and has a moisture sensitivity level of 1 (unlimited).
Maximum drain-source voltage is 30V.
Available in SC-100, SOT-669 package; supplier device package is LFPAK.
Maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.
50A at 25°C case temperature.
Maximum 3.7mOhm at 25A drain current and 10V gate drive.
Maximum 75nC at 10V gate voltage.