| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Vgs (Max) |
The HAT2096H-EL-E is an N-Channel power MOSFET from Renesas. It is designed for high-efficiency switching applications and features a maximum drain-to-source voltage of 30 V and a continuous drain current of 40 A at ambient temperature. The device achieves a low on-resistance of 5.3 mΩ maximum at 20 A drain current and 10 V gate drive, reducing conduction losses in power management circuits.
This MOSFET is built with MOSFET (Metal Oxide) technology and supports gate drive voltages of 4.5 V and 10 V for optimizing Rds(on). It has a maximum total gate charge of 40 nC at 10 V and an input capacitance of 2200 pF at 10 V drain-source voltage, enabling efficient switching in moderate-frequency designs. The maximum operating junction temperature is 150 °C, with a power dissipation of 20 W at case temperature.
The device is supplied in a surface-mount LFPAK package, which corresponds to case codes SC-100 and SOT-669. This compact package is suitable for automated assembly in space-constrained PCB layouts, commonly used in DC-DC converters, load switches, and battery management systems.
The maximum drain-source voltage (Vdss) is 30 V.
It is a surface-mount device available in package case SC-100, SOT-669, with supplier device package LFPAK.
The maximum operating junction temperature is 150 °C.
Yes, it is marked as RoHS3 Compliant, though this status is unverified.
The continuous drain current is 40 A at ambient temperature (Ta).
The maximum on-resistance is 5.3 mΩ at 20 A drain current and 10 V gate-source voltage.
The gate drive voltage for achieving maximum and minimum on-resistance is 4.5 V and 10 V.