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HAT1111C-EL-E The HAT1111C-EL-E is a microcontroller from Renesas with key electrical specs such as a drain to source breakdown voltage of -60 V and a gate to source breakdown voltage of -20 V to +10 V.
Mfr Part #:

HAT1111C-EL-E

Available from 1 distributors
Mfr Name: Renesas
Renesas
The HAT1111C-EL-E is a microcontroller from Renesas with key electrical specs such as a drain to source breakdown voltage of -60 V and a gate to source breakdown voltage of -20 V to +10 V.
✓ Total Stock: 150,667 pcs

HAT1111C-EL-E Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
150,667 pcs
On Request
150667 pcs On Request 1 On Request On Request On Request On Request On Request
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HAT1111C-EL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Input Capacitance
Storage Temperature
Tape & Reel
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HAT1111C-EL-E Description

Short technical summary and product information.

The HAT1111C-EL-E is a microcontroller manufactured by Renesas, categorized under embedded integrated circuits. It features electrical specifications including a drain to source breakdown voltage of -60 V, a gate to source breakdown voltage ranging from -20 V to +10 V, and a maximum drain current of -2 A. Designed for embedded applications, it provides reliable operation within specified thermal and electrical limits. The device is suitable for use in various electronic systems requiring precise control and monitoring, with a package suitable for surface mounting. Its electrical characteristics support robust performance in complex circuit environments.

HAT1111C-EL-E Quick Information

Product Type: Microcontroller
Canonical Name: HAT1111C-EL-E

HAT1111C-EL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HAT1111C-EL-E Features

  • Drain to source breakdown voltage of -60 V
  • Gate to source voltage range -20 V to +10 V
  • Maximum drain current of -2 A
  • Low on-state resistance of 245 mΩ
  • Supports high voltage switching applications

HAT1111C-EL-E Applications

  • Ideal for embedded control systems
  • Suitable for high voltage switching circuits
  • Used in industrial automation devices
  • Applicable in power management modules

HAT1111C-EL-E FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain to source breakdown voltage of the HAT1111C-EL-E?

-60 V

What is the gate to source voltage range for the HAT1111C-EL-E?

-20 V to +10 V

What is the maximum drain current of the HAT1111C-EL-E?

-2 A

What is the maximum channel temperature for this device?

150 °C

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