| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90,400 pcs
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90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas HAT1097RJ-EL-E is a P-channel power MOSFET suitable for various general-purpose power applications. This component offers a maximum drain-source voltage of 60V and a continuous drain current of up to 5A. Its maximum drain-source on-resistance is rated at 0.13 ohm, contributing to efficient power handling.
The MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and has a P-channel configuration. It is designed as a single transistor with a built-in diode, enhancing its protective capabilities. The transistor element material is silicon, housed within a plastic/epoxy package body.
This device is specified with a rectangular package shape and gull wing terminal form, indicating suitability for surface-mount assembly. The component is also noted as being lead-free and RoHS3 compliant, aligning with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current (ID) for the HAT1097RJ-EL-E is 5 A.
The maximum drain-source on-resistance for the HAT1097RJ-EL-E is 0.13 ohm.
The HAT1097RJ-EL-E has a maximum drain-source voltage of 60 V.
Yes, the HAT1097RJ-EL-E is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the HAT1097RJ-EL-E is 1 Unlimited.