| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,679 pcs
|
4679 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The HAT1069C-EL-E is a P-Channel power MOSFET designed for power switching applications. Fabricated with MOSFET (Metal Oxide) technology, it offers a drain-source voltage of -12V and continuous drain current of -4A. The device achieves a maximum on-resistance of 52mΩ at Vgs = 4.5V and Id = 1.5A, with typical on-resistance of 38mΩ under the same conditions. It is capable of 1.8V gate drive, enabling low-voltage logic level control.
Switching characteristics include typical turn-on delay of 35ns, rise time of 150ns, turn-off delay of 490ns, and fall time of 350ns (tested at Vgs = 4V, Id = 1.5A, Vdd = 10V, Rg = 4.7Ω). Gate charge is 16nC maximum at Vgs = 4.5V, and input capacitance is 1380pF typical at Vds = 10V. The device is housed in a compact 6-SMD flat leads package (6-CMFPAK) for surface mount assembly, with an operating junction temperature range up to 150°C and power dissipation of 900mW (on FR4 board).
6-SMD, Flat Leads (CMFPAK-6).
Channel temperature up to 150°C, storage temperature -55 to +150°C.
Yes, it is marked as RoHS3 Compliant, but this is unverified. Please verify with manufacturer.
P-Channel.
12V.
4A at 25°C ambient temperature.
Maximum 52mΩ at 1.5A, 4.5V drive; typical 38mΩ.