| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel | |
| Technology | |
| Transistor Type |
The HAT1020R-EL from Hitachi is a P-Channel Silicon Power MOSFET. It is designed for high-speed power switching applications and features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. The on-resistance (Rds On) is specified at 0.13 Ohms.
This MOSFET is housed in a SOP-8 package and is suitable for surface mount applications. Its P-channel configuration and silicon technology make it a versatile component for various power management tasks.
Key electrical characteristics include a maximum on-resistance of 70mOhm and a drain-source voltage of -30V with a continuous drain current of -5A. The part is described as new from the manufacturer and is available on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V (absolute value, -30V for P-channel).
The HAT1020R-EL is available in an SOP-8 package.
It is a P-Channel MOSFET.
The maximum on-resistance is 70mOhm at specified test conditions.
The continuous drain current is 5A at 25°C.
Silicon (Si) technology.
Surface mount.