| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,541 pcs
|
3541 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
This JFET transistor, part number HAH1DRW1200-S/SP3, is produced by LEM USA Inc. It falls under the category of discrete semiconductor products, specifically within the JFET transistors subcategory.
The component is noted for its compliance with RoHS3 standards and is REACH unaffected. It also carries a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. Specific electrical and mechanical characteristics are not detailed in the provided data, but its classification suggests suitability for various switching and amplification applications where JFETs are typically employed.
Further details regarding its operational parameters, package type, and mounting considerations would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The HAH1DRW1200-S/SP3 is RoHS3 Compliant.
The MSL for the HAH1DRW1200-S/SP3 is 1 Unlimited.
Yes, the HAH1DRW1200-S/SP3 is REACH Unaffected.