| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Renesas HAF1009S is a P-channel MOSFET designed for power applications. It offers a drain-source voltage rating of 60V and a maximum drain current of 40A. The on-resistance is specified at a maximum of 0.05 Ohms.
A key feature of this MOSFET is its integrated over-temperature shut-down capability, which senses the junction temperature and includes a built-in circuit in the gate area to prevent thermal runaway. This enhances device reliability and safety in operation.
The component is manufactured using Silicon (Si) technology and comes in an LDPAK-3 package. Its P-channel configuration makes it suitable for specific switching and amplification tasks within electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
P-channel.
60V.
40A.
0.05 Ohm.
Yes.
LDPAK-3.