| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,330 pcs
|
4330 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Manufacturer Name | |
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| Memory Type | |
| Voltage |
The SK Hynix H9TKNNN8KDMPQR-NGM is a memory module designed for advanced electronic applications. It features a combination of NAND and DRAM technologies, providing high-capacity storage solutions.
Key technical specifications include a NAND/DRAM combination memory type and a Samsung proprietary interface. The module is designed for high-speed read and write operations, ensuring efficient data handling. It is built to maintain stable performance across varying temperatures and ensure long-term data integrity.
This memory module is suitable for embedded applications due to its compact form factor. It is tested for endurance and adheres to Samsung's quality standards, offering reliable performance for demanding tasks. The module is compatible with Samsung electronic products and integrates seamlessly.
Applications for this memory module include mobile devices, data centers, embedded systems, and consumer electronics. Its competitive positioning in the IC market makes it a viable option for technological advancements requiring high-performance storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $20.68 | $20.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The H9TKNNN8KDMPQR-NGM uses a NAND / DRAM combination for its memory type.
This memory module utilizes a Samsung proprietary interface.
The package/case code is 869.
The standard package quantity is 9628 pieces.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.