| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
396 pcs
|
396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Halogen Free | |
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| Operating Voltage |
The SK HYNIX H5TC4G63AFR is a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM. It is ideally suited for main memory applications requiring large memory density, high bandwidth, and low power operation at 1.35V.
This DDR3L SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. It supports programmable CAS latency from 5 to 13 and programmable CAS Write latency from 5 to 9. The device also supports programmable burst length of 4 or 8.
The H5TC4G63AFR is available in 78-ball FBGA and 96-ball FBGA packages. It operates at a voltage of 1.35V with a tolerance of +0.100V / -0.067V. The average refresh cycle is 7.8 µs at 0°C to 85°C and 3.9 µs at 85°C to 95°C.
This component is lead-free and halogen-free, compliant with RoHS3 standards. It is suitable for various main memory applications where high density and low power consumption are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the H5TC4G63AFR is 1.35V.
The H5TC4G63AFR is available in 78-ball FBGA and 96-ball FBGA packages.
The H5TC4G63AFR is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the H5TC4G63AFR is Level 1.
The REACH status for the H5TC4G63AFR is REACH Unaffected.
The H5TC4G63AFR supports programmable CAS latency from 5 to 13.
The H5TC4G63AFR supports programmable burst lengths of 4 and 8.