| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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128 pcs
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128 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SK Hynix H5AN8G8NAFR is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM. It is designed for main memory applications requiring high memory density and bandwidth.
This component offers fully synchronous operations referenced to both rising and falling edges of the clock. Addresses and control inputs are latched on the rising edges of the CK, while data, data strobes, and write data masks are sampled on both rising and falling edges. The internal data paths are pipelined and 8-bit prefetched to achieve high bandwidth.
Key electrical specifications include a nominal supply voltage of 1.2V, with a minimum of 1.14V and a maximum of 1.26V. The operating temperature range is from 0°C to 85°C. The part features 1073741824 words of memory.
Mechanically, the H5AN8G8NAFR is housed in a PBGA78 package with dimensions of 7.5mm width and 11mm length. It is designed for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The H5AN8G8NAFR has a memory density of 8Gb.
The nominal supply voltage is 1.2V, with a maximum of 1.26V and a minimum of 1.14V.
The operating temperature range is 0°C to 85°C.
It is available in a 78-pin PBGA (Plastic Ball Grid Array) package with a JEDEC code of R-PBGA-B78.
It uses DDR4 technology.