| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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224 pcs
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224 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SK HYNIX H5AN8G6NAFR-XXC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM. It is designed for main memory applications requiring high density and bandwidth. This component offers fully synchronous operations referenced to both rising and falling edges of the clock. Addresses and control inputs are latched on the rising edges of the CK, while data, data strobes, and write data masks are sampled on both rising and falling edges. The data paths are internally pipelined and 8-bit prefetched to achieve high bandwidth.
Key electrical specifications include a nominal supply voltage of 1.2V, with a maximum of 1.26V and a minimum of 1.14V. The operating temperature ranges from 0°C to a maximum of 85°C. The memory IC type is DDR DRAM, with 1 port.
Packaged in a PBGA78 (R-PBGA-B78) with bottom terminal position, this component has dimensions of 7.5mm in width and 11mm in length. It is suitable for applications demanding significant memory capacity and high data transfer rates.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage is 1.2V nominal, with a range of 1.14V to 1.26V.
The operating temperature range is 0°C to 85°C.
The device is packaged in a PBGA78 (78-ball BGA) package with dimensions 7.5mm x 11mm.
The memory IC type is DDR DRAM.
The memory has 1,073,741,824 words.
The device has one port.