| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
396 pcs
|
396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Type | |
| Mounting Type | |
| Number of Ports | |
| SVHC Present |
This SK Hynix H5AN4G6NAFR is a DDR DRAM integrated circuit designed for high-speed memory applications. It comes in a 96-pin FBGA package, suitable for surface mount assembly.
The component operates within a supply voltage range of 1.14V to 1.26V, with a nominal voltage of 1.2V. The operating temperature range is from 0°C to 85°C, making it suitable for a variety of environmental conditions.
With a memory capacity of 268435456 words and 256000000 words of code, this single-port DRAM IC provides significant data storage capabilities. Its JEDEC package code is R-PBGA-B96, with dimensions of 7.5mm in width and 13mm in length.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage ranges from 1.14V to 1.26V, with a nominal value of 1.2V.
This component operates between 0°C and 85°C.
It uses a 96-pin FBGA package with JEDEC code R-PBGA-B96.
The memory capacity is 268435456 words, with 256000000 words of code.