| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,773 pcs
|
9773 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,324 pcs
|
2324 pcs | On Request | 1 | On Request | On Request | 1249+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Interface | |
| Memory Size | |
| Memory Type |
The SK HYNIX H57V2562GTR-60C is a 268,435,456-bit CMOS Synchronous DRAM (SDRAM) designed for applications requiring high memory density and bandwidth. It is organized as 4 banks of 4,194,304 x 16 I/O, providing a total capacity of 256Mb.
This SDRAM operates in synchronization with an input clock, latching control signals and input/output data on the rising edge of the CLK signal. The device supports programmable burst lengths of 1, 2, 4, 8 locations or full page, with an optional AUTO PRECHARGE function. It utilizes an internal pipelined architecture for high-speed operation and allows column address changes on every clock cycle for fast, random access.
The H57V2562GTR-60C requires a power supply voltage of 3.3V for both VDD and VDDQ. All inputs are LVTTL compatible. This memory component is suitable for consumer electronics and other applications demanding significant memory capacity and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
SDRAM.
256Mb.
4 banks x 4,194,304 x 16.
x16.
3.3V for VDD and VDDQ.
1, 2, 4, 8, or full page.