| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,218 pcs
|
1218 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
64 pcs
|
64 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Manufacturer Name | |
| Density | |
| SVHC Present | |
| Tape & Reel | |
| Voltage |
The SK HYNIX H27U2G8F2DTR-BI is a 2Gb NAND Flash Memory integrated circuit. It features a density of 2 Gigabits and a block size of 128KB. The component operates at a supply voltage of 3.3V and utilizes an x8 I/O interface.
This NAND Flash Memory is supplied in a TSOP48 package, suitable for surface mounting. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. The REACH status is noted as REACH Unaffected.
This part is designed for various memory storage applications within electronic systems. Its specifications make it suitable for embedded systems, data storage, and other applications requiring non-volatile memory.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The density of the H27U2G8F2DTR-BI memory is 2Gb.
The operating voltage for the H27U2G8F2DTR-BI is 3.3V.
The H27U2G8F2DTR-BI is supplied in a TSOP48 package.
The H27U2G8F2DTR-BI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for this part is 1 Unlimited.