BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Hestia Power H1M120F060 is a high-performance Silicon Carbide (SiC) MOSFET designed for demanding power applications. This device offers a robust 1200V drain-source voltage rating and a low on-resistance of 60mΩ, ensuring efficient power conversion.
Packaged in the industry-standard TO-247-3L package, the H1M120F060 is suitable for through-hole mounting and facilitates thermal management. Its SiC technology provides advantages such as higher switching frequencies and improved thermal performance compared to traditional silicon-based MOSFETs.
This MOSFET is well-suited for applications requiring high voltage and high efficiency, such as inverters, power supplies, and electric vehicle charging systems. The combination of its voltage rating, low on-resistance, and SiC material properties makes it a compelling choice for next-generation power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 1200V.
The continuous drain current is 41A at 25℃.
The on-resistance is 60mΩ.
The H1M120F060 is supplied in a TO-247-3L package.