| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The H11G2 from GI is a high voltage photodarlington optocoupler designed for various isolation applications. It integrates an infrared emitting diode with a silicon darlington phototransistor, featuring an integral base-emitter resistor for optimized elevated temperature characteristics.
Key electrical specifications include a minimum collector-emitter breakdown voltage (BVCEO) of 80V for the H11G2, and an input-output isolation voltage of 5300 Vac(rms). The device offers a high current transfer ratio (CTR), with a minimum of 500% at 1 mA input current and a typical 1000% CTR at 10 mA input current. It operates within a temperature range of -55°C to +100°C.
This optocoupler is suitable for applications such as CMOS logic interface, telephone ring detection, low input TTL interface, and power supply isolation. Its surface mount package makes it adaptable for modern PCB designs.
The H11G2 is recognized by Underwriters Laboratory (UL) under File# E90700.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The H11G2 optocoupler has an input-output isolation voltage of 5300 Vac(rms).
The H11G2 operates within a temperature range of -55°C to +100°C.
The H11G2 has a typical current transfer ratio of 1000% at IF = 10 mA and VCE = 1 V.
The minimum collector-emitter breakdown voltage (BVCEO) for the H11G2 is 80V.
The H11G2 is a photodarlington-type optically coupled optocoupler.