BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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180 pcs
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180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 0629K | On Request | On Request |
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The H11G1 from On Semiconductor is a photodarlington-type optically coupled optocoupler. This device integrates a gallium arsenide infrared emitting diode with a silicon darlington connected phototransistor, which includes an integral base-emitter resistor to enhance elevated temperature characteristics.
Key electrical specifications include a maximum forward current of 60mA and a typical forward voltage of 1.5V at 1mA. The optocoupler offers a maximum output voltage of 100V and a maximum output current of 100mA. It boasts a high current transfer ratio (CTR) of 1000% and an isolation voltage of 5300Vrms.
This component is housed in a DIP package and designed for through-hole mounting. It operates within a temperature range of -55°C to 100°C and has a maximum power dissipation of 250mW. The H11G1 is suitable for applications requiring electrical isolation and signal coupling.
With one channel, the H11G1 provides reliable optical isolation. Its design is optimized for performance across a wide temperature range, making it a versatile choice for various industrial and electronic applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum output voltage for the H11G1 is 100V.
The H11G1 optocoupler has a maximum output current of 100mA.
The H11G1 has an isolation voltage rating of 5300Vrms.
The typical current transfer ratio for the H11G1 is 1000%.
The H11G1 operates in a temperature range from -55°C to 100°C.
The H11G1 is available in a DIP package.
The H11G1 is designed for through-hole mounting.