| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,000 pcs
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11000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor H11D1SM is a phototransistor-type optically coupled optoisolator. It integrates a gallium arsenide infrared emitting diode with a high voltage NPN silicon phototransistor. This device is designed for applications requiring electrical isolation.
The H11D1SM is housed in a standard plastic six-pin dual-in-line package (DIP), suitable for through-hole mounting. A key electrical characteristic is its high breakdown voltage, with the H11D1M series specified at 300V.
This optocoupler is part of the H11D1M series, which includes similar devices like the 4N38M, H11D3M, and MOC8204M, offering variations in voltage ratings. The device is classified under Interfaces > Phototransistor Optocouplers > Phototransistor Output - DC Sensing Input Optocouplers.
While specific applications are not detailed in the provided data, optocouplers of this type are generally used for signal transmission between circuits with different voltage levels, providing isolation and protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The H11D1M series, which includes the H11D1SM, has a breakdown voltage of 300V.
The H11D1SM is supplied in a standard plastic six-pin dual-in-line package (DIP).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.