| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Current | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Voltage | |
| Tape & Reel |
The H11D1 optocoupler by Isocom Components utilizes a GaAs infrared emitting diode coupled to a silicon planar phototransistor. This device is designed for signal transmission between electrically separated circuits and offers a high collector emitter breakdown voltage of 300V for the H11D1 and H11D2 variants, and 200V for the H11D3. It also provides an isolation test voltage of 5000 VRMS.
Key electrical characteristics include a maximum forward current of 60mA and a maximum power dissipation of 100mW. The maximum reverse voltage is rated at 6V. The H11D1 is housed in a standard DIP-6 plastic package, suitable for through-hole mounting.
This optocoupler is suitable for applications in telecom, industrial controls, battery-powered equipment, office machines, and programmable controllers. Its design emphasizes features like high current transfer ratio, low coupling capacitance, and high common mode transient immunity.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector emitter breakdown voltage for the H11D1 is 300V.
The isolation test voltage is 5000 VRMS.
The maximum forward current is 60mA.
The H11D1 is supplied in a DIP-6 package.