| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,995 pcs
|
26995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Forward Current | |
| Forward Voltage | |
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| Power Dissipation |
The H11AA4M from On Semiconductor is an optocoupler designed for signal isolation applications. It comprises two inverse-parallel connected gallium-arsenide infrared emitting diodes that drive a single silicon phototransistor output. This configuration provides a robust isolation barrier.
Key electrical specifications include a maximum isolation voltage of 7500Vrms, a maximum collector current of 50mA, and a collector-emitter voltage of 100V. The typical forward voltage is 1.5V, and the typical current transfer ratio is 100%. The device has a maximum power dissipation of 150mW.
Mechanically, the H11AA4M is housed in a PDIP package and designed for through-hole mounting. It operates across a wide temperature range, from a minimum of -40°C to a maximum of 100°C. The series consists of devices with two infrared emitting diodes connected in inverse parallel, driving a single silicon phototransistor output.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum isolation voltage is 7500Vrms.
The H11AA4M is housed in a PDIP package.
The operating temperature range is -40°C to 100°C.
The maximum forward current is 60mA.
The typical current transfer ratio is 100%.
The maximum collector-emitter voltage is 100V.