| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,460 pcs
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12460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor H11A817A is a phototransistor optocoupler designed for various applications including power supply regulators, digital logic inputs, and microprocessor inputs. It features a gallium arsenide infrared emitting diode driving a silicon phototransistor within a compact 4-pin dual in-line package.
Key electrical characteristics include a 70V Collector-Emitter Voltage (VCEO) and a 50mA Continuous Collector Current (IC). The device offers a Current Transfer Ratio (CTR) in selected groups, with the H11A817A specified at 80-160%. It operates within a temperature range of -55°C to +100°C and has a total power dissipation of 200mW.
The optocoupler is housed in a 4-pin package suitable for through-hole mounting. Its specifications make it suitable for applications requiring signal isolation and interface between different voltage domains.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55 to +100 °C.
The minimum Collector-Emitter Voltage (VCEO) is 70 V.
The Continuous Collector Current (IC) is 50 mA.
The Current Transfer Ratio (CTR) for the H11A817A is 80-160%.
The H11A817A is in a 4-Pin package.